Browsing by Author "Andreev, I. A."

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    Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode
    (Polish Acad Sciences Inst Physics, 2015-04-01) Ahmetoğlu, Muhittin; Küçür, Banu; Andreev, I. A.; Kunitsyna, E. V.; Mikhailova, M. P.; Yakovlev, Y. P.; AHMETOĞLU, MUHİTDİN; Küçür, Banu; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü; CZA-5782-2022; KDM-6805-2024
    In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
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    N+-GaSb/n o -GainAsSb/P +-GaSb type II heterojunction photodiodes with low radiation damage
    (Natl Inst Optoelectronics, 2018-09-01) Ahmetoglu (Afrailov), Muhittin; Kirezli, Burcu; Kaynak, Gökay; Andreev, I. A.; Kunitsyna, E., V; Mikhailova, M. P.; Yakovlev, Yu P.; AHMETOĞLU, MUHİTDİN; Kirezli, Burcu; Kaynak, Gökay; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü; 0000-0002-9555-6903; KDM-6805-2024; FEP-7816-2022; CYZ-0032-2022
    The electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.
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    Photodiodes for detecting the emission of quantum-sized disc lasers operating in the whispering gallery modes (2.2-2.3 μm)
    (Pleiades Publishing Inc, 2020-07-01) Kunitsyna, E., V; Royz, M. A.; Andreev, I. A.; Grebenshchikova, E. A.; Pivovarova, A. A.; Lebiadok, Ya, V; Mikulich, R. Yu; Iliinskaya, N. D.; Yakovlev, Yu P.; Ahmetoglu, Muhitdin; AHMETOĞLU, MUHİTDİN; Bursa Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.; 0000-0002-9555-6903; KDM-6805-2024
    Photodiodes based on solid solutions in the GaSb-InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range of 2.2-2.3 mu m. The capacity of photodiodes with a photosensitive area 2.0 mm in diameter isC= 520 pF atU= -2 V, which corresponds to a time constant of tau = 53 ns. It is shown that the parameters of the fabricated photodiodes make it possible to detect the emission of quantum-sized disc lasers at room temperature not using cryogenic cooling.