Browsing by Author "Boydedayev, S. R."

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    Photoelectrical characteristic of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type II heterojunctions
    (Journal of Optoelectronics and Advanced Materials, 2008-10) Boydedayev, S. R.; Kadirov, O.; Ahmetoğlu, Muhitdin; Özer, Mehmet; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400; 9742545600
    Photoelectrical characteristics and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The photocurrent sign dependence on photon energy as a function of forward bias in isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAIAsSb heterojunctions due to hole confinement at the type II interface is observed and discussed. This effect is due to modulation of the barrier transparency at the interface limiting the tunnel transitions of the conduction electrons and to the localization of photoholes in the potential well at the type II interface. The sign reversal of the photocurrent on photon energy as a function of applied voltage takes place only on the forward bias.
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    To the theory of electromotive force generated in potential barrier at ultrahigh frequency field
    (World Scientific Publication, 2009-06-20) Shamirzaev, S. Kh; Gulyamov, Gafur; Gulyamov, Abdurasul Gafurovich; Dadamirzaev, M. G.; Boydedayev, S. R.; Aprailov, N.; Ahmetoğlu, Muhitdin A.; Kaynak, Gökay; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400; 12042075600
    Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metalsemiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω0 HF quasi-potential is positive, but at frequencies ω < ω0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.