Browsing by Author "Kaya, S."

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Concomitant syphilis infection in patients with diagnosed hiv/aids: A retrospective multicentre study
(Wiley, 2018-10-01) Sarıgül, F.; Sayan, M.; İnan, D.; Deveci, A.; Ceran, N.; Celen, M.; çaĞatay, A.; Özdemir, H. Özkan; Kuşcu, F.; Karagöz, G.; Heper, Yasemin; Karabay, O.; Dokuzoğuz, B.; Kaya, S.; Erben, N.; Karaoğlan, I.; Ersöz, G. Munis; Günal, O.; Hatipoğlu, C.; Kutlu, S. Sayin; Akbulut, A.; Saba, R.; Şener, A.; Büyüktuna, S.; HEPER, YASEMİN; Bursa Uludağ Üniversitesi/Tıp Fakültesi; AAH-6506-2021
Effects of packing materials on the sensitivity of radfet with hfo 2 gate dielectric for electron and photon sources
(Taylor, 2015-10-03) Kahraman, Ayşegül; Yılmaz, E.; Kaya, S.; Aktağ, A.; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi; 0000-0002-1836-7033; AAH-6441-2021
The radiation sensing field effect transistor (RadFET) with SiO2 gate oxide has been commonly used as a device component or dosimetry system in the radiation applications such as space research, radiotherapy, and high-energy physics experiments. However, alternative gate oxides and more suitable packaging materials are still demanded for these dosimeters. HfO2 is one of the most attractive gate oxide materials that are currently under investigation by many researchers. In this study, Monte Carlo simulations of the average deposited energy in RadFET dosimetry systems with different package lid materials for point electron and photon sources were performed with the aim of evaluating the effects of package lids on the sensitivity of the RadFET by using HfO2 as a gate dielectric material. The RadFET geometry was defined in a PENGEOM package and electron-photon transport was simulated by a PENELOPE code. The relatively higher average deposited energies in the sensitive region (HfO2 layer) for electron energies of 250keV-20MeV were obtained from the RadFET with the Al2O3 package lid despite of some deviations from the general tendency. For the photon energies of 20-100keV, the average amount of energy deposited in RadFET with Al2O3 package was higher compared with the other capped devices. The average deposited energy in the sensitive region was quite close to each other at 200keV for both capped and uncapped devices. The difference in the average deposited energy of the RadFET with different package lid materials was not high for photon energies of 200-1200keV. The increase in the average deposited energy in the HfO2 layer of the RadFET with Ta package lid was higher compared with the other device configurations above 3MeV.
Integrase strand transfer inhibitors (INSTIs) resistance mutations in HIV-1 infected Turkish patients
(Taylor & Francis, 2016) Sayan, Murat; Gündüz, Alper; Ersöz, G.; İnan, Asuman; Deveci, Aydın; Günal, Özgür; Sargın, Fatma; Karagöz, Gül; İnci, Ayşe; İnan, Dilara; Ulcay, Asım; Karaoğlan, İlkay; Kaya, S.; Kutlu, Selda S.; Süer, Kaya; Çağatay, Atahan; Akalın, Halis; Uludağ Üniversitesi/Tıp Fakültesi/Enfeksiyon Hastalıkları Anabilim Dalı.; AAU-8952-2020; 57207553671
Objectives: Integrase strand transfer inhibitor (INSTI) is a new class of antiretroviral (ARV) drugs designed to block the action of the integrase viral enzyme, which is responsible for insertation of the HIV-1 genome into the host DNA. The aim of this study was to evaluate for the first time INSTI resistance mutations in Turkish patients. Methods: This study was conducted in Turkey, between April 2013 and April 2015 using 169 HIV-1-infected patients (78 ARV naive patients and 91 ARV-experienced patients). Laboratory and clinical characteristics of ARV naive and ARV-experienced patients were as follows: gender (M/F): 71/7 and 80/11, median age: 38 and 38.4; median CD4+ T-cell: 236 and 216 cells/mm3, median HIV-1 RNA: 4.95+ E5 and 1.08E+ 6 copies/ml. Population-based seqeunces of the reverse transcriptase, protease, and integrase domains of the HIV-1 pol gene were used to detect HIV-1 drug resistance mutations. Result: INSTI resistance mutations were not found in recently diagnosed HIV-1-infected patients. However, ARV-experienced patients had major resistance mutations associated with raltegravir and elvitegravir; the following results were generated: F121Y, Y143R, Q148R and E157Q (6/91 - 6.6%). Conclusions: The prevalence of INSTI resistant mutations in ART-experienced patients suggested that resistance testing must be incorporated as an integral part of HIV management with INSTI therapies.