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Browsing by browse.metadata.sponsorship "Abant İzzet Baysal Üniversitesi (AİBÜ)"

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    Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors
    (Elsevier, 2015-09-01) Kaya, Şenol; Yılmaz, Ercan; Karaçalı, Hüseyin; Kahraman, Ayşegül G.; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 0000-0002-1836-7033; AAH-6441-2021; 47161190600
    The frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors.