Person: HACIİSMAİLOĞLU, MUHAMMED CÜNEYT
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HACIİSMAİLOĞLU
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MUHAMMED CÜNEYT
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Publication Modelling of power loss in electrical steels(Polish Acad Sciences Inst Physics, 2008-01-01) Küçük, İ.; Ertürk, K.; Haciismailoğlu, M. C.; HACIİSMAİLOĞLU, MUHAMMED CÜNEYT; Derebaşı, Naim; DEREBAŞI, NAİM; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0002-0781-3376; 0000-0003-2546-0022; ABA-5148-2020; AAI-2254-2021; K-7950-2012This paper presents a new artificial neural network approach based on loss separation model to compute power loss on different types of electrical steels. The network was trained by a Levenberg-Marquardt algorithm. The results obtained by using the proposed model were compared with a commonly used conventional model. The comparison has shown that the neural network model is in good agreement with experimental data with respect to the conventional model.Publication A new prospect to measure the built-in potential for photodiodes(Elsevier, 2023-12-01) Hacıismailoğlu, M. Cüneyt; Ahmetoğlu, Muhitdin; HACIİSMAİLOĞLU, MUHAMMED CÜNEYT; AHMETOĞLU, MUHİTDİN; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0002-0781-3376; KDM-6805-2024; K-7950-2012We present a novel approach to determine the built-in potential for photodiodes, which depends on the excitation of the photodiode by a pulsed or modulated light under forward bias. The proposed method was tested for commercially available photodiodes and the measurement results were compared with the values, which were obtained by conventional current-voltage and capacitance-voltage measurements. It was found that the proposed method gave consistent results with current-voltage and capacitance-voltage measurements. For the confirmation of the accuracy of this method, temperature dependent measurements were also performed for Si photodiode in a temperature range of 298 - 333 K to compare the obtained built-in potential values with theory. This analysis showed that the results of the proposed method were more reliable than the conventional measurements.Publication Prediction of optical parameters of sn doped cdo films using neural network(Natl Inst Optoelectronics, 2008-02-01) Köse, S.; Atay, F.; Bilgin, V.; Akyuz, I.; Ertürk, Kadir; Haciismailoglu, M. C.; HACIİSMAİLOĞLU, MUHAMMED CÜNEYT; Küçük, İ.; Derebaşı, Naim; DEREBAŞI, NAİM; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0001-5650-9146; 0000-0002-0880-5028; 0000-0002-0781-3376; 0000-0001-8483-7366; 0000-0003-2546-0022; AAG-5509-2019; K-7950-2012; ABG-7537-2020; A-1120-2010; AAV-3055-2021; ABA-5148-2020; AAI-2254-2021In recent years, there was great interest and demand for the production and investigation of low cost and novel transparent conducting oxide films. CdO is a promising material among these films for future applications with its unique properties. A learning and generalization ability, real-time operation, and ease of implementation have made an artificial neural network popular in recent years. In this work we have produced CdO:Sn films by the ulrasonic spray pyrolysis technique which is economical and simple to process. Optical parameters of Sn doped CdO films with developed, have been estimated by the artificial neural network using experimental results as a training data. The correlation obtain from the artificial neural network was found to be 99% with the experimental results.Publication P-type cuprous oxide thin films electrodeposited on si nanowires with (100) orientation(Pleiades Publishing Inc, 2023-12-01) Erdoğan, Nilsen; Bozdoğan, E.; Alper, Morris; Hacıismailoğlu, Muhammed Cüneyd; HACIİSMAİLOĞLU, MUHAMMED CÜNEYT; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0002-0781-3376; K-7950-2012The n- type silicon nanowires with vertically aligned different lengths and diameters were produced from the commercial n-type silicon wafers with (100) rientation using the metal assisted chemical etching method. Then, in order to fabricate p-type cuprous oxide/n-type silicon nanowire heterojunctions, the p-type cuprous oxide thin films were electrodeposited on the produced n-silicon nanowires. The X-ray diffraction patterns revealed that both the n-type silicon nanowires and p-type cuprous oxide/n-type silicon nanowire heterojunctions have cubic structure with a single phase. The cross-section field emission scanning electron microscopy images clearly showed the formation of the nanowires that have different lengths and diameters changing with the etching time. The optical characterizations by ultraviolet-visible-near infrared region spectrometry indicated that the reflectivity values of silicon nanowires and p-cuprous oxide/n-type silicon nanowire heterojunctions are much lower that of n-type silicon wafer. In addition, the diode performances of the heterojunctions were determined by current-voltage measurements and their ideality factors were found to be changed considerably depending on the structure of nanowires.