Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes

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dc.contributor.authorTekin, Nalan
dc.contributor.authorBeyaz, Saadet
dc.contributor.authorKoçkar, Hakan
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorKara, Ali
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.tr_TR
dc.contributor.researcheridAAG-6271-2019tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid7102824859tr_TR
dc.date.accessioned2022-05-24T08:42:07Z
dc.date.available2022-05-24T08:42:07Z
dc.date.issued2012-01-01
dc.description.abstractIn this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively.en_US
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes". Thin Solid Films, 520(6), 2106-2109.en_US
dc.identifier.endpage2109tr_TR
dc.identifier.issn0040-6090
dc.identifier.issue6tr_TR
dc.identifier.scopus2-s2.0-84855931323tr_TR
dc.identifier.startpage2106tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2011.08.066
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609011015707
dc.identifier.urihttp://hdl.handle.net/11452/26650
dc.identifier.volume520tr_TR
dc.identifier.wos000300459200080
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevier Scienceen_US
dc.relation.collaborationYurt içitr_TR
dc.relation.journalThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectMetal semiconductor-structureen_US
dc.subjectSchottky barrieren_US
dc.subjectSingle walled carbon nanotubeen_US
dc.subjectN-vinyl imidazoleen_US
dc.subjectAdsorptionen_US
dc.subjectBias voltageen_US
dc.subjectCapacitanceen_US
dc.subjectCarbonen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectDiodesen_US
dc.subjectEthyleneen_US
dc.subjectEthylene glycolen_US
dc.subjectLeakage currentsen_US
dc.subjectPolymerizationen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting siliconen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSemiconductor diodesen_US
dc.subjectSiliconen_US
dc.subjectBarrier heightsen_US
dc.subjectCapacitance voltage characteristicen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectCurrent voltageen_US
dc.subjectCvd methoden_US
dc.subjectElectrical characteristicen_US
dc.subjectElectrical measurementen_US
dc.subjectIdeality factorsen_US
dc.subjectImpurity densityen_US
dc.subjectN-vinyl imidazoleen_US
dc.subjectReverse-biasen_US
dc.subjectRoom temperatureen_US
dc.subjectSchottky barriersen_US
dc.subjectSchottky diodesen_US
dc.subjectSingle-walled carbonen_US
dc.subjectSurface polymerizationen_US
dc.subjectSingle-walled carbon nanotubes (swcn)en_US
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface Statesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosMaterials science, coatings & filmsen_US
dc.subject.wosPhysics, applieden_US
dc.subject.wosPhysics, condensed matteren_US
dc.titleElectrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubesen_US
dc.typeArticle
dc.wos.quartileQ2en_US

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