Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions
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Date
2004-05
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Elsevier
Abstract
Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias.
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Keywords
Instruments and Instrumentation, Optics, Physics, Isotype structures, Type II heterojunction with staggered band alignment, Photo-response, Dark current, Doping (additives), Electric potential, Energy gap, Heterojunctions, Light emitting diodes, Photodetectors, Photoelectricity, Photosensitivity, Gallium alloys
Citation
Afrailov, M. A. (2004). “Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions”. Infrared Physics and Technology, 45(3), 169-175.