Investigation of RadFET response to X-ray and electron beams

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dc.contributor.authorYılmaz, E.
dc.contributor.authorMcGarrigle, A. M.
dc.contributor.authorVasovic, N.
dc.contributor.authorYeğen, Dinçer
dc.contributor.authorJaksic, Aleksandar
dc.contributor.buuauthorKahraman, Ayşegül
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyet Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.orcid0000-0002-1836-7033tr_TR
dc.contributor.researcheridAAH-6441-2021tr_TR
dc.contributor.scopusid47161190600tr_TR
dc.date.accessioned2022-11-02T08:17:16Z
dc.date.available2022-11-02T08:17:16Z
dc.date.issued2017-06-08
dc.description.abstractThe irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET/pMOS dosimeter, to high energy X-rays and electron beams was investigated. The threshold voltages before and after irradiation were measured and the trap densities in the gate oxide and oxide/silicon interface of the RadFETs are evaluated. The RadFETs were irradiated with 6 MV X-rays, and 10 and 18 MeV electron beams emitted from a Linear accelerator (LINAC). Linear and non-linear fits to experimental results showed that after an initial linear response up to several Gy, deviation from the linearity occurred due to electric field screening by the radiation induced oxide trapped charges. The radiation-induced fixed traps (FTs) and switching traps (STs) were analysed and the FT density was found to be higher than the ST density for all beam types and doses. The radiation response, fading characteristics, and variation of the trapped charges of the RadFETs showed similar behaviour in tests.en_US
dc.description.sponsorshipAbant İzzet Baysal Üniversitesi- AIBU - BAP. 2015.03.02.954 - BAP. 2014.03.02.705tr_TR
dc.description.sponsorshipTürkiye Cumhuriyeti Kalkınma Bakanlığı - 2012 K 120360 - 2016K121110tr_TR
dc.identifier.citationYılmaz, E. vd. (2017). ''Investigation of RadFET response to X-ray and electron beams''. Applied Radiation and Isotopes, 127, 156-160.en_US
dc.identifier.endpage160tr_TR
dc.identifier.issn0969-8043
dc.identifier.pubmed28622597tr_TR
dc.identifier.scopus2-s2.0-85020637920tr_TR
dc.identifier.startpage156tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.apradiso.2017.06.004
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0969804316304122
dc.identifier.urihttp://hdl.handle.net/11452/29321
dc.identifier.volume127tr_TR
dc.identifier.wos000407535600024tr_TR
dc.indexed.pubmedPubMeden_US
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.collaborationYurt içitr_TR
dc.relation.collaborationSanayitr_TR
dc.relation.collaborationYurt dışıtr_TR
dc.relation.journalApplied Radiation and Isotopesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChemistryen_US
dc.subjectNuclear science & technologyen_US
dc.subjectRadiology, nuclear medicine & medical imagingen_US
dc.subjectOxide trapsen_US
dc.subjectIrradiationen_US
dc.subjectSensitivityen_US
dc.subjectChargeen_US
dc.subjectBiasen_US
dc.subjectElectric fieldsen_US
dc.subjectElectron beamsen_US
dc.subjectIrradiationen_US
dc.subjectLinear acceleratorsen_US
dc.subjectMOS devicesen_US
dc.subjectRadiationen_US
dc.subjectThreshold voltageen_US
dc.subjectElectric field screeningen_US
dc.subjectFading characteristicsen_US
dc.subjectHigh energy X rayen_US
dc.subjectOxide trapped chargeen_US
dc.subjectRadiation responseen_US
dc.subjectRadiation-induceden_US
dc.subjectRadiation-sensingen_US
dc.subjectSwitching trap (STs)en_US
dc.subjectField effect transistorsen_US
dc.subject.emtreeOxideen_US
dc.subject.emtreeSiliconen_US
dc.subject.emtreeArticleen_US
dc.subject.emtreeControlled studyen_US
dc.subject.emtreeDensityen_US
dc.subject.emtreeDosimeteren_US
dc.subject.emtreeElectric fielden_US
dc.subject.emtreeElectric potentialen_US
dc.subject.emtreeElectron acceleratoren_US
dc.subject.emtreeElectron beamen_US
dc.subject.emtreePriority journalen_US
dc.subject.emtreeRadiation doseen_US
dc.subject.emtreeRadiation measurementen_US
dc.subject.emtreeRadiation responseen_US
dc.subject.emtreeRadiation sensing field effect transistoren_US
dc.subject.emtreeRadiosensitivityen_US
dc.subject.emtreeX irradiationen_US
dc.subject.scopusDosimeters; MOSFET; Radiationen_US
dc.subject.wosChemistry, inorganic & nuclearen_US
dc.subject.wosNuclear science & technologyen_US
dc.subject.wosRadiology, nuclear medicine & medical imagingen_US
dc.titleInvestigation of RadFET response to X-ray and electron beamsen_US
dc.typeArticle
dc.wos.quartileQ4en_US
dc.wos.quartileQ3 (Chemistry, inorganic & nuclear)en_US

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