Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
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Date
2002-02
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.
Description
Keywords
Emission, Engineering, Optics, Telecommunications, Energy gap, Thermodynamic equilibrium, Photodiodes, Band bending, Band energy diagram, Barrier heights, Capacitance voltage characteristics, Carrier separation, Hole concentration, Long wavelength photodiodes, Photoelectrical parameters, Spectral response, Semiconductor growth, Heterojunctions, Interfaces (materials), Lattice constants, Liquid phase epitaxy, Ohmic contacts, Semiconducting antimony compounds, Semiconducting indium compounds, Semiconductor device manufacture, Solid solutions, Substrates
Citation
Mikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.