Electrical properties of GaAs-GaAlAs near infrared light emitting diodes
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Date
2012
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Natl Inst Optoelectronics
Abstract
The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.
Description
Keywords
Materials science, Optics, Light emitting diode, Avalanche breakdown, I-V characteristics, Aluminum gallium arsenide, Diodes, Gallium arsenide, III-V semiconductors, Infrared devices, Light emitting diodes, Semiconducting gallium, Infrared light emitting diodes, IV characteristics, Near infrared light, Avalanche diodes
Citation
Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.