Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes
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Date
2009-06
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Publisher
Natl Inst Optoelectronics
Abstract
Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.
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Keywords
Broken-gap heterojunctions, Current flow mechanisms, Type ii staggered-lineup, II heterojunctions, Radiation, Lasers, Materials science, Optics, Aluminum compounds, Current voltage characteristics, Heterojunctions, III-V semiconductors, Indium compounds, Semiconducting antimony compounds, Broken gaps, Current flow mechanisms, Current transport, Diffusion mechanisms, Experimental investigations, Heterojunction photodiodes, Tunneling charges, Type II, Gallium compounds
Citation
Ahmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607.