Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode

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dc.contributor.authorAndreev, Iereus Alexey
dc.contributor.authorKunitsyna, Ekaterina V.
dc.contributor.authorMikhailova, Maya P.
dc.contributor.authorYakovlev, Yury P.
dc.contributor.buuauthorKucur, Banu
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.researcheridCZA-5782-2022tr_TR
dc.contributor.researcheridCCC-9142-2022tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2024-01-09T05:56:44Z
dc.date.available2024-01-09T05:56:44Z
dc.date.issued2016-04
dc.descriptionBu çalışma, 16-19, Nisan 2015 tarihlerinde Ölüdeniz[Türkiye]’de düzenlenen 5. International Advances in Applied Physics and Materials Science Congress and Exhibition (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractIn this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.en_US
dc.identifier.citationKucur, B. vd. (2016). "Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode". Acta Physica Polonica A, 129(4), Special Issue SI, 767-769.en_US
dc.identifier.endpage769tr_TR
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue4, Special Issue SIen_US
dc.identifier.scopus2-s2.0-84971482937tr_TR
dc.identifier.startpage767tr_TR
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.129.767
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/129/a129z4p089.pdf
dc.identifier.urihttps://hdl.handle.net/11452/38854
dc.identifier.volume129tr_TR
dc.identifier.wos000376595000090
dc.indexed.pubmedPubMeden_US
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoenen_US
dc.publisherPolish Acad Sciences Inst Physicsen_US
dc.relation.collaborationYurt dışıtr_TR
dc.relation.journalActa Physica Polonica Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhysicsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectOpen circuit voltageen_US
dc.subjectCurrent mechanismsen_US
dc.subjectElectrical characteristicen_US
dc.subjectElectrical characterizationen_US
dc.subjectLight intensityen_US
dc.subjectLow bandgapen_US
dc.subjectPhotovoltaic parametersen_US
dc.subjectTemperature dependenceen_US
dc.subjectThermophotovoltaicsen_US
dc.subjectTemperature distributionen_US
dc.subject.scopusHeat Emissions; Hot Temperature; Emitters (Equipment)en_US
dc.subject.wosPhysics, multidisciplinaryen_US
dc.titleElectrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diodeen_US
dc.typeArticleen_US
dc.wos.quartileQ4 (Physics, multidisciplinary)

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