The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode

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dc.contributor.buuauthorAhmetoglu (Afrailov), Muhitdin
dc.contributor.buuauthorKırsoy, Ahmet
dc.contributor.buuauthorAsimov, A.
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.researcheridCBY-1915-2022tr_TR
dc.contributor.researcheridCCC-9142-2022tr_TR
dc.contributor.researcheridFDX-3050-2022tr_TR
dc.contributor.researcheridCZA-5782-2022tr_TR
dc.contributor.scopusid55849025200tr_TR
dc.contributor.scopusid56716481600tr_TR
dc.contributor.scopusid55849632800tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.date.accessioned2023-07-25T08:40:37Z
dc.date.available2023-07-25T08:40:37Z
dc.date.issued2016-11-25
dc.description.abstractWe fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Omega respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 10(12) ev(-1)cm(-2)at (Ec-0.352) eV to 2.94 x 10(11) eV(-1)crn(-2) at (Ec-0.436) eV.en_US
dc.identifier.citationAhmetoğlu (Afrailov), M. vd. (2016). "The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode". Optoelectronics and Advanced Materials, Rapid Communications, 10(11-12), 825-830.en_US
dc.identifier.endpage830tr_TR
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue11-12tr_TR
dc.identifier.pubmed27221456tr_TR
dc.identifier.scopus2-s2.0-85008698160tr_TR
dc.identifier.startpage825tr_TR
dc.identifier.urihttp://hdl.handle.net/11452/33266
dc.identifier.volume10tr_TR
dc.identifier.wos000391777900008
dc.indexed.pubmedPubMeden_US
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectSchottky barrier diodeen_US
dc.subjectSeries resistanceen_US
dc.subjectIdeality factoren_US
dc.subjectConducting polymersen_US
dc.subjectState density distributionsen_US
dc.subjectElectronic parametersen_US
dc.subjectV characteristicsen_US
dc.subjectCurrent-voltageen_US
dc.subjectC-Ven_US
dc.subjectInterface statesen_US
dc.subjectI-Ven_US
dc.subjectMechanismen_US
dc.subjectPPVen_US
dc.subjectCapacitanceen_US
dc.subjectElectric resistanceen_US
dc.subjectGallium arsenideen_US
dc.subjectGold compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectInterface statesen_US
dc.subjectSemiconducting galliumen_US
dc.subjectSemiconductor diodesen_US
dc.subjectCapacitance-voltage characteristicsen_US
dc.subjectEnergy distributionsen_US
dc.subjectIdeality factorsen_US
dc.subjectInterfacial layeren_US
dc.subjectIV characteristicsen_US
dc.subjectSchottky barrier diodes (SBDs)en_US
dc.subjectSemiconductor layersen_US
dc.subjectSeries resistancesen_US
dc.subjectSchottky barrier diodesen_US
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Propertiesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.titleThe electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diodeen_US
dc.typeArticle
dc.wos.quartileQ4en_US

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