Determination of the parameters for the back-to-back switched Schottky barrier structures
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Date
2010-03
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Elsevier
Abstract
The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements.
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Keywords
Metal-semiconductor-metal structures, Schottky barrier, Gallium arsenide, Contacts, Diode, Semiconductors, Height, Gaas, Materials science, Physics, Arsenic compounds, Capacitance, Gallium alloys, Gallium compounds, Metals, Parameter estimation, Photodetectors, Schottky barrier diodes, Semiconducting gallium, Structural metals, Barrier heights, Capacitance voltage, Capacitance voltage measurements, Current voltage, Gallium arsenide, Metal semiconductor metal, Metal-semiconductor-metal structures, Radio-frequency sputtering, Room temperature, Schottky barrier, Schottky barrier contacts, Schottky barrier structures, Schottky contacts, Temperature range, Current voltage characteristics
Citation
Ahmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654.