Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method

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dc.contributor.buuauthorKaplan, H. K.
dc.contributor.buuauthorAkay, Sertan Kemal
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.orcid0000-0002-4144-5837tr_TR
dc.contributor.researcheridGWV-7916-2022tr_TR
dc.contributor.researcheridR-7260-2016tr_TR
dc.contributor.scopusid57194768599tr_TR
dc.contributor.scopusid24801954600tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2023-10-31T10:26:10Z
dc.date.available2023-10-31T10:26:10Z
dc.date.issued2018-05-24
dc.description.abstractZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.en_US
dc.identifier.citationKaplan, H. K. vd. (2018).''Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method''. Superlattices and Microstructures, 120, 402-409.en_US
dc.identifier.endpage409tr_TR
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85049313224tr_TR
dc.identifier.startpage402tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2018.05.055
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0749603618304634
dc.identifier.urihttp://hdl.handle.net/11452/34686
dc.identifier.volume120tr_TR
dc.identifier.wos000445713700050tr_TR
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.journalSuperlattices and Microstructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhysicsen_US
dc.subjectZnS/Sien_US
dc.subjectHeterojunctionen_US
dc.subjectPhotoelectricalen_US
dc.subjectPhotoluminescenceen_US
dc.subjectTVAen_US
dc.subjectThin-filmsen_US
dc.subjectOptical-propertiesen_US
dc.subjectSiliconen_US
dc.subjectSIen_US
dc.subjectDepositionen_US
dc.subjectPhotoluminescenceen_US
dc.subjectReflectivityen_US
dc.subjectThicknessen_US
dc.subjectDiodeen_US
dc.subjectGaasen_US
dc.subjectAmorphous filmsen_US
dc.subjectEnergy gapen_US
dc.subjectHeterojunctionsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectOpen circuit voltageen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectSubstratesen_US
dc.subjectThin filmsen_US
dc.subjectVacuum applicationsen_US
dc.subjectVacuum technologyen_US
dc.subjectZinc sulfideen_US
dc.subjectCurrent-voltage measurementsen_US
dc.subjectIllumination conditionsen_US
dc.subjectOptical characterizationen_US
dc.subjectPhoto-electrical propertiesen_US
dc.subjectPhotocurrent measurementen_US
dc.subjectPhotoelectricalen_US
dc.subjectPhotoluminescence measurementsen_US
dc.subjectThermionic vacuum arc methodsen_US
dc.subjectSulfur compoundsen_US
dc.subject.scopusZinc Sulfide; Optical Properties; Spray Pyrolysisen_US
dc.subject.wosPhysics, condensed matteren_US
dc.titlePhotoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc methoden_US
dc.typeArticle
dc.wos.quartileQ2en_US

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