Browsing by Author "Mikhailova, M. P."

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    Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode
    (Polish Acad Sciences Inst Physics, 2015-04-01) Ahmetoğlu, Muhittin; Küçür, Banu; Andreev, I. A.; Kunitsyna, E. V.; Mikhailova, M. P.; Yakovlev, Y. P.; AHMETOĞLU, MUHİTDİN; Küçür, Banu; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü; CZA-5782-2022; KDM-6805-2024
    In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
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    N+-GaSb/n o -GainAsSb/P +-GaSb type II heterojunction photodiodes with low radiation damage
    (Natl Inst Optoelectronics, 2018-09-01) Ahmetoglu (Afrailov), Muhittin; Kirezli, Burcu; Kaynak, Gökay; Andreev, I. A.; Kunitsyna, E., V; Mikhailova, M. P.; Yakovlev, Yu P.; AHMETOĞLU, MUHİTDİN; Kirezli, Burcu; Kaynak, Gökay; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü; 0000-0002-9555-6903; KDM-6805-2024; FEP-7816-2022; CYZ-0032-2022
    The electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.
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    Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
    (IEEE, 2002-02) Mikhailova, M. P.; Stoyanov, Nkolay; Andreychuk, O. V.; Moiseev, K. D.; Andreev, Igor; Yakovlev, Yu P.; Afrailov, M. Ahmetoğlu; Uludağ Üniversitesi.; 55153359100
    The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.