Publication:
A new prospect to measure the built-in potential for photodiodes

dc.contributor.authorHacıismailoğlu, M. Cüneyt
dc.contributor.authorAhmetoğlu, Muhitdin
dc.contributor.buuauthorHACIİSMAİLOĞLU, MUHAMMED CÜNEYT
dc.contributor.buuauthorAHMETOĞLU, MUHİTDİN
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-0781-3376
dc.contributor.researcheridKDM-6805-2024
dc.contributor.researcheridK-7950-2012
dc.date.accessioned2024-10-10T12:52:00Z
dc.date.available2024-10-10T12:52:00Z
dc.date.issued2023-12-01
dc.description.abstractWe present a novel approach to determine the built-in potential for photodiodes, which depends on the excitation of the photodiode by a pulsed or modulated light under forward bias. The proposed method was tested for commercially available photodiodes and the measurement results were compared with the values, which were obtained by conventional current-voltage and capacitance-voltage measurements. It was found that the proposed method gave consistent results with current-voltage and capacitance-voltage measurements. For the confirmation of the accuracy of this method, temperature dependent measurements were also performed for Si photodiode in a temperature range of 298 - 333 K to compare the obtained built-in potential values with theory. This analysis showed that the results of the proposed method were more reliable than the conventional measurements.
dc.identifier.doi10.1016/j.mseb.2023.116865
dc.identifier.eissn1873-4944
dc.identifier.issn0921-5107
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2023.116865
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0921510723006074
dc.identifier.urihttps://hdl.handle.net/11452/46222
dc.identifier.volume298
dc.identifier.wos001161453100001
dc.indexed.wosWOS.SCI
dc.language.isoen
dc.publisherElsevier
dc.relation.journalMaterials Science and Engineering B-advanced Functional Solid-state Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectLight-emitting-diodes
dc.subjectBuilt-in potential
dc.subjectPhotodiode
dc.subjectSi
dc.subjectGe
dc.subjectIngaas
dc.subjectGasb/gainassb
dc.subjectScience & technology
dc.subjectTechnology
dc.subjectPhysical sciences
dc.subjectMaterials science, multidisciplinary
dc.subjectPhysics, condensed matter
dc.subjectMaterials science
dc.subjectPhysics
dc.titleA new prospect to measure the built-in potential for photodiodes
dc.typeArticle
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
relation.isAuthorOfPublication82584aef-f502-4b13-a805-f9de1bf37ec0
relation.isAuthorOfPublication243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery82584aef-f502-4b13-a805-f9de1bf37ec0

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