Publication:
Electrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diode

Simple item page
dc.contributor.authorOkutan, Mustafa
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.buuauthorKırsoy, Ahmet
dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid56716481600
dc.contributor.scopusid16021109400
dc.date.accessioned2022-12-16T06:39:55Z
dc.date.available2022-12-16T06:39:55Z
dc.date.issued2016-02
dc.description.abstractThe Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method. Schottky diode was investigated under dark and light intensity by the current-voltage (I-V) characteristics of the heterojunction. Thermionic current mechanism above the barrier has been detected by current-voltage measurements. It was found that the barrier height increases and the ideality factor decreases with light intensity. The obtained results indicate that GaAs/GO diode can be used as a photosensor in optoelectronic applications. Also, Schottky diode has been measured by capacitance-voltage (C-V) and conductance-voltage (G-V) in the frequency range from 10 kHz to 1 MHz at room temperature.
dc.identifier.citationKırsoy, A. vd. (2016). "Electrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(1), 108-114.
dc.identifier.endpage114
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84954243495
dc.identifier.startpage108
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1884
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jno/2016/00000011/00000001/art00019;jsessionid=1ripkv5e87j54.x-ic-live-02
dc.identifier.urihttp://hdl.handle.net/11452/29924
dc.identifier.volume11
dc.identifier.wos000377629000019
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.collaborationYurt içi
dc.relation.collaborationSanayi
dc.relation.journalJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectEngineering
dc.subjectScience & technology - other topics
dc.subjectPhysics
dc.subjectGraphene oxide
dc.subjectGaAs
dc.subjectSchottky contacts
dc.subjectCurrent-voltage
dc.subjectNegative capacitance
dc.subjectSeries resistance
dc.subjectElectronic parameters
dc.subjectVoltage-dependence
dc.subjectV characteristics
dc.subjectInterface states
dc.subjectC-V
dc.subjectFrequency
dc.subjectTemperature
dc.subjectInterlayer
dc.subjectCapacitance
dc.subjectDiodes
dc.subjectGallium arsenide
dc.subjectGermanium
dc.subjectGraphene
dc.subjectHeterojunctions
dc.subjectSemiconducting gallium
dc.subjectCapacitance voltage
dc.subjectCurrent voltage
dc.subjectCurrent voltage measurement
dc.subjectGraphene oxides
dc.subjectOptoelectronic applications
dc.subjectThermionic currents
dc.subjectSchottky barrier diodes
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosEngineering, electrical & electronic
dc.subject.wosNanoscience & nanotechnology
dc.subject.wosPhysics, applied
dc.titleElectrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diode
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

Files

License bundle

Now showing 1 - 1 of 1
Placeholder
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

İndeksli Yayınlar / Indexed Publications