Publication:
The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes

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dc.contributor.authorTekgül, Atakan
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorAlper, Mürsel
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridAAG-8795-2021
dc.contributor.scopusid16021109400
dc.contributor.scopusid7005719283
dc.contributor.scopusid36903670200
dc.date.accessioned2022-05-20T11:05:32Z
dc.date.available2022-05-20T11:05:32Z
dc.date.issued2012
dc.description.abstractA Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.
dc.identifier.citationAhmetoğlu, M. vd. (2012). "The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(1-2), 304-306.
dc.identifier.endpage306
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue1-2
dc.identifier.scopus2-s2.0-84860188952
dc.identifier.startpage304
dc.identifier.urihttp://hdl.handle.net/11452/26565
dc.identifier.volume6
dc.identifier.wos000302580300069
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.collaborationYurt içi
dc.relation.journalOptoelectronics and Advanced Materials-Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectOptics
dc.subjectSchottky diode
dc.subjectNi thin films
dc.subjectSurfaces
dc.subjectHf
dc.subjectAntimony compounds
dc.subjectCapacitance
dc.subjectCurrent voltage characteristics
dc.subjectElectrodeposition
dc.subjectElectrodes
dc.subjectElectrolytes
dc.subjectGold compounds
dc.subjectLeakage currents
dc.subjectNickel
dc.subjectNickel compounds
dc.subjectSemiconductor diodes
dc.subjectSilicon
dc.subjectSilicon compounds
dc.subjectThin films
dc.subjectCapacitance voltage measurements
dc.subjectElectrical characteristic
dc.subjectElectrical characterization
dc.subjectElectrodeposition technique
dc.subjectMetal semiconductor interface
dc.subjectSchottky diodes
dc.subjectReverse bias leakage current
dc.subjectSchottky barrier diodes
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface States
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleThe electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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