Publication:
Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorKara, Ali
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentKimya Bölümü
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0003-2457-6314
dc.contributor.researcheridAAG-6271-2019
dc.contributor.scopusid16021109400
dc.contributor.scopusid7102824859
dc.contributor.scopusid36903670200
dc.date.accessioned2023-04-05T11:03:36Z
dc.date.available2023-04-05T11:03:36Z
dc.date.issued2016-07
dc.descriptionBu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractPoly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
dc.identifier.citationAhmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208.
dc.identifier.endpage208
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84987814785
dc.identifier.startpage206
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.130.206
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/130/a130z1p053.pdf
dc.identifier.urihttp://hdl.handle.net/11452/32193
dc.identifier.volume130
dc.identifier.wos000384810700054
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.journalActa Physica Polonica A
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhysics
dc.subjectCapacitance-voltage characteristics
dc.subjectSchottky-barrier diode
dc.subjectElectrical-properties
dc.subjectEthylene
dc.subjectNanotubes
dc.subjectPolymerization
dc.subjectPolyols
dc.subjectYarn
dc.subjectCurrent mechanisms
dc.subjectCurrent-voltage measurements
dc.subjectElectronic device
dc.subjectEthylene glycol dimethacrylate
dc.subjectFabricated structures
dc.subjectSingle-walled
dc.subjectSurface polymerization
dc.subjectEthylene glycol
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosPhysics, multidisciplinary
dc.titlePoly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
dc.typeArticle
dc.typeProceedings Paper
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.contributor.departmentFen Edebiyat Fakültesi/Kimya Bölümü
local.indexed.atScopus
local.indexed.atWOS

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