Publication: Investigation of parameters of new MAPD-3NM silicon photomultipliers
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Date
2022-01-01
Authors
Authors
Ahmadov, F.
Ahmadov, G.
Akbarov, R.
Aktağ, A.
Budak, E.
Doğancı, E.
Gürer, U.
Holik, M.
Kahraman, A.
Karacali, H.
Journal Title
Journal ISSN
Volume Title
Publisher
Iop Publishing Ltd
Abstract
In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
Description
Bu çalışma, Haziran 27-Temmuz 01, 2021 tarihlerinde Ghent[Belçika]’da düzenlenen 22nd International Workshop on Radiation Imaging Detectors Kongresi‘nde bildiri olarak sunulmuştur.
Keywords
Gamma detectors, Photon detectors for uv, visible and ir photons (solid-state) (pin diodes, apds, si-pmts, g-apds, ccds, ebccds, emccds, cmos imagers, etc.), Spectrometers, Photon detectors for uv, visible and ir photons (gas) (gas-photocathodes, solid-photocathodes), Instruments & instrumentation