Publication:
Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.date.accessioned2022-06-29T11:15:00Z
dc.date.available2022-06-29T11:15:00Z
dc.date.issued2010-04
dc.description.abstractCurrent flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures with a low sensitivity area. An experimental investigation of current-voltage characteristics has been done in the temperature range from 77-210K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge the key role at low temperatures under both forward and reverse biases.
dc.identifier.citationAhmetoğlu, M. A. (2010). "Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures". Optoelectronics and Advanced Materials, Rapid Communications, 4(4), 441-444.
dc.identifier.endpage444
dc.identifier.issn1842-6573
dc.identifier.issue4
dc.identifier.scopus2-s2.0-77952031911
dc.identifier.startpage441
dc.identifier.urihttps://doi.org/
dc.identifier.urihttps://avesis.uludag.edu.tr/yayin/139ad13f-cd1d-467a-abc3-e3dd4d7d4b67/dark-currents-in-gainassb-based-heterojunction-photodiodes-with-a-low-diameter-area-at-low-temperatures
dc.identifier.urihttp://hdl.handle.net/11452/27494
dc.identifier.volume4
dc.identifier.wos000277551600001
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCurrent flow mechanisms
dc.subjectType II staggered-lineup heterojunctions
dc.subjectII heterojunctions
dc.subjectRadiation
dc.subjectMaterials science
dc.subjectOptics
dc.subjectCurrent voltage characteristics
dc.subjectGallium compounds
dc.subjectHeterojunctions
dc.subjectIII-V semiconductors
dc.subjectIndium alloys
dc.subjectSemiconducting antimony compounds
dc.subjectSemiconductor alloys
dc.subjectDiffusion mechanisms
dc.subjectExperimental investigations
dc.subjectHeterojunction photodiodes
dc.subjectHigh temperature
dc.subjectTemperature range
dc.subjectTunneling charges
dc.subjectType II
dc.subjectGallium alloys
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodes
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleDark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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