Publication:
Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m

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dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid55153359100
dc.date.accessioned2022-04-15T11:35:01Z
dc.date.available2022-04-15T11:35:01Z
dc.date.issued2012-05-31
dc.description.abstractThe photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
dc.identifier.citationAfrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.
dc.identifier.endpage5017
dc.identifier.issn0040-6090
dc.identifier.issue14
dc.identifier.scopus2-s2.0-84860264687
dc.identifier.startpage5014
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2012.03.014
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609012002738
dc.identifier.urihttp://hdl.handle.net/11452/25805
dc.identifier.volume520
dc.identifier.wos000304568300034
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier Science
dc.relation.bap2007/36
dc.relation.journalThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectPhysics
dc.subjectDark currents
dc.subjectType II heterojunctions
dc.subjectBand alignment
dc.subjectLiquid phase epitaxy
dc.subjectPhotovoltaic characteristics
dc.subjectIII-V semiconductors
dc.subjectSpectral range
dc.subjectHeterojunctions
dc.subjectLight
dc.subjectLiquid phase epitaxy
dc.subjectOpen circuit voltage
dc.subjectPhotovoltaic effects
dc.subjectBand alignments
dc.subjectHeterojunction photodiodes
dc.subjectIncident light
dc.subjectPhotovoltaic modes
dc.subjectRoom temperature
dc.subjectType II
dc.subjectType II heterojunction
dc.subjectCurrent voltage characteristics
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodes
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosMaterials science, coatings & films
dc.subject.wosPhysics, applied
dc.subject.wosPhysics, condensed matter
dc.titlePhotoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m
dc.typeArticle
dc.wos.quartileQ2
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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