Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence
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Date
2013-01
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Amer Scientific Publishers
Abstract
We present results in studying narrow-gap misaligned heterojunctions based on InxGa1-x,AsySb1-y/GaSb solid solutions with a composition close to In As (x >= 0.80, E-g = 0.26 eV at T = 300 K). Unusual asymmetric electrical properties of the heterostructures (N-n, P-p, N-p and P-n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure and diode-like I-V characteristics of the N-p, N-n and P-p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P-n structure with ohmic behavior was determined by the conductivity-magnetic field dependence.
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Keywords
Chemistry, Electrochemistry, Instruments & instrumentation, Physics, Heterostructure, Energy band diagram, Carrier concentration, Infrared-lasers, Inas, Band structure, Electric properties, Magnetic fields, Energy-band diagram, Field dependence, InAs, IV characteristics, Ohmic behavior, Ohmic behaviour, Temperature regions, Type II, Heterojunctions
Citation
Ahmetoğlu, M. ve Kucur, B. (2013). “Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence”. Sensor Letters, 11(1), Special Issue, 202-204.