Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Anabilim Dalı.tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.date.accessioned2023-05-15T10:47:54Z
dc.date.available2023-05-15T10:47:54Z
dc.date.issued2013-01
dc.description.abstractWe present results in studying narrow-gap misaligned heterojunctions based on InxGa1-x,AsySb1-y/GaSb solid solutions with a composition close to In As (x >= 0.80, E-g = 0.26 eV at T = 300 K). Unusual asymmetric electrical properties of the heterostructures (N-n, P-p, N-p and P-n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure and diode-like I-V characteristics of the N-p, N-n and P-p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P-n structure with ohmic behavior was determined by the conductivity-magnetic field dependence.en_US
dc.identifier.citationAhmetoğlu, M. ve Kucur, B. (2013). “Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence”. Sensor Letters, 11(1), Special Issue, 202-204.en_US
dc.identifier.endpage204tr_TR
dc.identifier.issn1546-198X
dc.identifier.issue1, Special Issueen_US
dc.identifier.scopus2-s2.0-84877986092tr_TR
dc.identifier.startpage202tr_TR
dc.identifier.urihttps://doi.org/10.1166/sl.2013.2804
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/senlet/2013/00000011/00000001/art00052;jsessionid=3bxtvrldo68fo.x-ic-live-01
dc.identifier.urihttp://hdl.handle.net/11452/32664
dc.identifier.volume11tr_TR
dc.identifier.wos000321593400051
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.journalSensor Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChemistryen_US
dc.subjectElectrochemistryen_US
dc.subjectInstruments & instrumentationen_US
dc.subjectPhysicsen_US
dc.subjectHeterostructureen_US
dc.subjectEnergy band diagramen_US
dc.subjectCarrier concentrationen_US
dc.subjectInfrared-lasersen_US
dc.subjectInasen_US
dc.subjectBand structureen_US
dc.subjectElectric propertiesen_US
dc.subjectMagnetic fieldsen_US
dc.subjectEnergy-band diagramen_US
dc.subjectField dependenceen_US
dc.subjectInAsen_US
dc.subjectIV characteristicsen_US
dc.subjectOhmic behavioren_US
dc.subjectOhmic behaviouren_US
dc.subjectTemperature regionsen_US
dc.subjectType IIen_US
dc.subjectHeterojunctionsen_US
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodesen_US
dc.subject.wosChemistry, analyticalen_US
dc.subject.wosElectrochemistryen_US
dc.subject.wosInstruments & instrumentationen_US
dc.subject.wosPhysics, applieden_US
dc.titleDetermination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependenceen_US
dc.typeArticle

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