Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition
No Thumbnail Available
Date
2007-04
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Natl Inst Optoelectronics
Abstract
In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.
Description
Bu çalışma, 05-07. Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.
Keywords
Electrical properties, Schottky diodes, Electrodeposition, Deposition, Hydrogen, Surfaces, Materials science, Optics, Physics, Current voltage characteristics, Diodes, Schottky barrier diodes, Electric properties, Leakage currents, Electrodeposition, Electrodes, Silicon, Barrier heights, C-V measurement, Schottky diodes, Diode currents, Reverse bias leakage current, Electrical characteristic, Electrical measurement, Si (1 1 1), Copper compounds
Citation
Ahmetoğlu, M. A. vd. (2007). "Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition". Journal of Optoelectronics and Advanced Materials, 9(4), 818-821.