Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorAlper, Mürsel
dc.contributor.buuauthorŞafak, Mürşide
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.buuauthorGürpınar, B.
dc.contributor.buuauthorKocak, F.
dc.contributor.buuauthorHaciismailoğlu, Muhammed Cüneyt
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.orcid0000-0002-0781-3376tr_TR
dc.contributor.orcid0000-0002-4756-9988tr_TR
dc.contributor.researcheridAAG-8795-2021tr_TR
dc.contributor.researcheridAAE-3350-2022tr_TR
dc.contributor.researcheridK-7950-2012tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid7005719283tr_TR
dc.contributor.scopusid13613646100tr_TR
dc.contributor.scopusid18036952100tr_TR
dc.contributor.scopusid36910088200tr_TR
dc.contributor.scopusid15843834900tr_TR
dc.contributor.scopusid8975743500tr_TR
dc.date.accessioned2024-03-07T13:04:49Z
dc.date.available2024-03-07T13:04:49Z
dc.date.issued2007-04
dc.descriptionBu çalışma, 05-07. Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.tr_TR
dc.description.abstractIn this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.en_US
dc.identifier.citationAhmetoğlu, M. A. vd. (2007). "Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition". Journal of Optoelectronics and Advanced Materials, 9(4), 818-821.en_US
dc.identifier.eissn1841-7132
dc.identifier.endpage821tr_TR
dc.identifier.issn1454-4164
dc.identifier.issue4tr_TR
dc.identifier.scopus2-s2.0-38549155084tr_TR
dc.identifier.startpage818tr_TR
dc.identifier.urihttps://hdl.handle.net/11452/40276en_US
dc.identifier.volume9tr_TR
dc.identifier.wos000245834800004
dc.indexed.wosSCIEen_US
dc.indexed.wosCPCISen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.journalJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararasıtr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectrical propertiesen_US
dc.subjectSchottky diodesen_US
dc.subjectElectrodepositionen_US
dc.subjectDepositionen_US
dc.subjectHydrogenen_US
dc.subjectSurfacesen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectDiodesen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectElectric propertiesen_US
dc.subjectLeakage currentsen_US
dc.subjectElectrodepositionen_US
dc.subjectElectrodesen_US
dc.subjectSiliconen_US
dc.subjectBarrier heightsen_US
dc.subjectC-V measurementen_US
dc.subjectSchottky diodesen_US
dc.subjectDiode currentsen_US
dc.subjectReverse bias leakage currenten_US
dc.subjectElectrical characteristicen_US
dc.subjectElectrical measurementen_US
dc.subjectSi (1 1 1)en_US
dc.subjectCopper compoundsen_US
dc.subject.scopusCatalysis; Born-Oppenheimer Approximation; Molecular Relaxationen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.subject.wosPhysics, applieden_US
dc.titleElectrical properties of n-Si/Cu Schottky diodes formed by electrodepositionen_US
dc.typeArticleen_US
dc.typeProceedings Paperen_US
dc.wos.quartileQ3en_US

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