The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes

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dc.contributor.authorTekgül, Atakan
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorAlper, Mürsel
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.researcheridAAG-8795-2021tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid7005719283tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.date.accessioned2022-05-20T11:05:32Z
dc.date.available2022-05-20T11:05:32Z
dc.date.issued2012
dc.description.abstractA Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.en_US
dc.identifier.citationAhmetoğlu, M. vd. (2012). "The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(1-2), 304-306.en_US
dc.identifier.endpage306tr_TR
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue1-2tr_TR
dc.identifier.scopus2-s2.0-84860188952tr_TR
dc.identifier.startpage304tr_TR
dc.identifier.urihttp://hdl.handle.net/11452/26565
dc.identifier.volume6tr_TR
dc.identifier.wos000302580300069
dc.indexed.pubmedPubMeden_US
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.collaborationYurt içitr_TR
dc.relation.journalOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectSchottky diodeen_US
dc.subjectNi thin filmsen_US
dc.subjectSurfacesen_US
dc.subjectHfen_US
dc.subjectAntimony compoundsen_US
dc.subjectCapacitanceen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectrodepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectrolytesen_US
dc.subjectGold compoundsen_US
dc.subjectLeakage currentsen_US
dc.subjectNickelen_US
dc.subjectNickel compoundsen_US
dc.subjectSemiconductor diodesen_US
dc.subjectSiliconen_US
dc.subjectSilicon compoundsen_US
dc.subjectThin filmsen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectElectrical characteristicen_US
dc.subjectElectrical characterizationen_US
dc.subjectElectrodeposition techniqueen_US
dc.subjectMetal semiconductor interfaceen_US
dc.subjectSchottky diodesen_US
dc.subjectReverse bias leakage currenten_US
dc.subjectSchottky barrier diodesen_US
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface Statesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.titleThe electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodesen_US
dc.typeArticle
dc.wos.quartileQ4en_US

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