The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes
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Date
2012
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Journal ISSN
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Publisher
Natl Inst Optoelectronics
Abstract
A Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.
Description
Keywords
Materials science, Optics, Schottky diode, Ni thin films, Surfaces, Hf, Antimony compounds, Capacitance, Current voltage characteristics, Electrodeposition, Electrodes, Electrolytes, Gold compounds, Leakage currents, Nickel, Nickel compounds, Semiconductor diodes, Silicon, Silicon compounds, Thin films, Capacitance voltage measurements, Electrical characteristic, Electrical characterization, Electrodeposition technique, Metal semiconductor interface, Schottky diodes, Reverse bias leakage current, Schottky barrier diodes
Citation
Ahmetoğlu, M. vd. (2012). "The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(1-2), 304-306.