Publication: The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes
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Ahmetoğlu, Muhitdin
Alper, Mürsel
Kucur, Banu
Authors
Tekgül, Atakan
Advisor
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Natl Inst Optoelectronics
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Abstract
A Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.
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Keywords
Materials science, Optics, Schottky diode, Ni thin films, Surfaces, Hf, Antimony compounds, Capacitance, Current voltage characteristics, Electrodeposition, Electrodes, Electrolytes, Gold compounds, Leakage currents, Nickel, Nickel compounds, Semiconductor diodes, Silicon, Silicon compounds, Thin films, Capacitance voltage measurements, Electrical characteristic, Electrical characterization, Electrodeposition technique, Metal semiconductor interface, Schottky diodes, Reverse bias leakage current, Schottky barrier diodes
Citation
Ahmetoğlu, M. vd. (2012). "The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(1-2), 304-306.