Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2022-06-29T11:15:00Z
dc.date.available2022-06-29T11:15:00Z
dc.date.issued2010-04
dc.description.abstractCurrent flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures with a low sensitivity area. An experimental investigation of current-voltage characteristics has been done in the temperature range from 77-210K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge the key role at low temperatures under both forward and reverse biases.en_US
dc.identifier.citationAhmetoğlu, M. A. (2010). "Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures". Optoelectronics and Advanced Materials, Rapid Communications, 4(4), 441-444.en_US
dc.identifier.endpage444tr_TR
dc.identifier.issn1842-6573
dc.identifier.issue4tr_TR
dc.identifier.scopus2-s2.0-77952031911tr_TR
dc.identifier.startpage441tr_TR
dc.identifier.urihttps://doi.org/
dc.identifier.urihttps://avesis.uludag.edu.tr/yayin/139ad13f-cd1d-467a-abc3-e3dd4d7d4b67/dark-currents-in-gainassb-based-heterojunction-photodiodes-with-a-low-diameter-area-at-low-temperatures
dc.identifier.urihttp://hdl.handle.net/11452/27494
dc.identifier.volume4tr_TR
dc.identifier.wos000277551600001
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCurrent flow mechanismsen_US
dc.subjectType II staggered-lineup heterojunctionsen_US
dc.subjectII heterojunctionsen_US
dc.subjectRadiationen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectGallium compoundsen_US
dc.subjectHeterojunctionsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium alloysen_US
dc.subjectSemiconducting antimony compoundsen_US
dc.subjectSemiconductor alloysen_US
dc.subjectDiffusion mechanismsen_US
dc.subjectExperimental investigationsen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectHigh temperatureen_US
dc.subjectTemperature rangeen_US
dc.subjectTunneling chargesen_US
dc.subjectType IIen_US
dc.subjectGallium alloysen_US
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.titleDark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperaturesen_US
dc.typeArticle
dc.wos.quartileQ4en_US

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