Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm
No Thumbnail Available
Date
2010-01
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K.
Description
Keywords
Dark currents, Photodiode structures, Avalanche multiplication, Liquid-phase epitaxy (LPE), Growth, Instruments & instrumentation, Optics, Physics, Crystal growth, Heterojunction bipolar transistors, Heterojunctions, Liquids, Avalanche multiplication, C-V measurement, Difference frequency, Electrical characteristic, InAsSbP, Mid-infrared regions, Photodiode structures, Power-voltage, Recombination centers, Room temperature, Space charge regions, Spectral range, Temperature dependence, Temperature range, Uncooled, Wavelength ranges, Photodiodes
Citation
Afrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32.