Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm

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dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid55153359100tr_TR
dc.date.accessioned2022-03-28T07:25:01Z
dc.date.available2022-03-28T07:25:01Z
dc.date.issued2010-01
dc.description.abstractThe electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K.en_US
dc.identifier.citationAfrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32.en_US
dc.identifier.endpage32tr_TR
dc.identifier.issn1350-4495
dc.identifier.issn1879-0275
dc.identifier.issue1tr_TR
dc.identifier.scopus2-s2.0-71349083242tr_TR
dc.identifier.startpage29tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2009.08.005
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449509001054
dc.identifier.urihttp://hdl.handle.net/11452/25371
dc.identifier.volume53tr_TR
dc.identifier.wos000274599800005tr_TR
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.journalInfrared Physics and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDark currentsen_US
dc.subjectPhotodiode structuresen_US
dc.subjectAvalanche multiplicationen_US
dc.subjectLiquid-phase epitaxy (LPE)en_US
dc.subjectGrowthen_US
dc.subjectInstruments & instrumentationen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectCrystal growthen_US
dc.subjectHeterojunction bipolar transistorsen_US
dc.subjectHeterojunctionsen_US
dc.subjectLiquidsen_US
dc.subjectAvalanche multiplicationen_US
dc.subjectC-V measurementen_US
dc.subjectDifference frequencyen_US
dc.subjectElectrical characteristicen_US
dc.subjectInAsSbPen_US
dc.subjectMid-infrared regionsen_US
dc.subjectPhotodiode structuresen_US
dc.subjectPower-voltageen_US
dc.subjectRecombination centersen_US
dc.subjectRoom temperatureen_US
dc.subjectSpace charge regionsen_US
dc.subjectSpectral rangeen_US
dc.subjectTemperature dependenceen_US
dc.subjectTemperature rangeen_US
dc.subjectUncooleden_US
dc.subjectWavelength rangesen_US
dc.subjectPhotodiodesen_US
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
dc.subject.wosInstruments & instrumentationen_US
dc.subject.wosOpticsen_US
dc.subject.wosPhysics, applieden_US
dc.titlePhotoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μmen_US
dc.typeArticle
dc.wos.quartileQ3en_US

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