Publication:
Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.date.accessioned2024-03-13T05:22:00Z
dc.date.available2024-03-13T05:22:00Z
dc.date.issued2007-11
dc.description.abstractThe electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C-2 similar to V, and the impurity concentration in the weakly doped region was (5-7)x10(15) cm(-3) at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.
dc.identifier.citationAhmetoğlu, M. A. (2007). "Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m". Journal of Optoelectronics and Advanced Materials, 9(11), 3567-3570.
dc.identifier.eissn1841-7132
dc.identifier.endpage3570
dc.identifier.issn1454-4164
dc.identifier.issue11
dc.identifier.scopus2-s2.0-38549101676
dc.identifier.startpage3567
dc.identifier.urihttps://hdl.handle.net/11452/40359
dc.identifier.volume9
dc.identifier.wos000251435200057
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.journalJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDark currents
dc.subjectPhotodiode structures
dc.subjectLiquid phase epitaxy (LPE)
dc.subjectMaterials science
dc.subjectOptics
dc.subjectPhysics
dc.subjectCurrent voltage characteristics
dc.subjectLiquid phase epitaxy
dc.subjectDark currents
dc.subjectIndium arsenide
dc.subjectHeterojunctions
dc.subjectIII-V semiconductors
dc.subjectElectrical characteristic
dc.subjectTemperature differential
dc.subjectExperimental investigations
dc.subjectPhotodiode structures
dc.subjectHeterojunction photodiodes
dc.subjectP-n heterojunctions
dc.subjectImpurity concentration
dc.subjectMid-infrared regions
dc.subjectPhotodiodes
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodes
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosPhysics, applied
dc.subject.wosOptics
dc.titleDark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m
dc.typeArticle
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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