Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2024-03-13T05:22:00Z
dc.date.available2024-03-13T05:22:00Z
dc.date.issued2007-11
dc.description.abstractThe electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C-2 similar to V, and the impurity concentration in the weakly doped region was (5-7)x10(15) cm(-3) at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.en_US
dc.identifier.citationAhmetoğlu, M. A. (2007). "Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m". Journal of Optoelectronics and Advanced Materials, 9(11), 3567-3570.en_US
dc.identifier.eissn1841-7132
dc.identifier.endpage3570tr_TR
dc.identifier.issn1454-4164
dc.identifier.issue11tr_TR
dc.identifier.scopus2-s2.0-38549101676tr_TR
dc.identifier.startpage3567tr_TR
dc.identifier.urihttps://hdl.handle.net/11452/40359en_US
dc.identifier.volume9tr_TR
dc.identifier.wos000251435200057
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.journalJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDark currentsen_US
dc.subjectPhotodiode structuresen_US
dc.subjectLiquid phase epitaxy (LPE)en_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectDark currentsen_US
dc.subjectIndium arsenideen_US
dc.subjectHeterojunctionsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectElectrical characteristicen_US
dc.subjectTemperature differentialen_US
dc.subjectExperimental investigationsen_US
dc.subjectPhotodiode structuresen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectP-n heterojunctionsen_US
dc.subjectImpurity concentrationen_US
dc.subjectMid-infrared regionsen_US
dc.subjectPhotodiodesen_US
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosPhysics, applieden_US
dc.subject.wosOpticsen_US
dc.titleDark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu men_US
dc.typeArticleen_US
dc.wos.quartileQ3en_US

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