Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb
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Date
2008-01-30
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Elsevier
Abstract
Current flow mechanisms have been studied for liquid phase epitaxy grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the N-n isotype heterostructures were investigated in detail at several temperatures. It is shown that both the type II staggered and misaligned heterojunctions can behave as Schottky diodes and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. These measurements establish that the reverse current in both (staggered and misaligned) investigated structures are determined mainly by tunneling mechanism. The theoretical relations for reverse dark current in staggered lineup isotype heterostructures have been developed.
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Keywords
Materials science, Physics, Band alignment, Dark current, III-V quaternary compounds, Isotype structures, Liquid phase epitaxy, Type II heterojunctions, Gallium compounds, Liquid phase epitaxy, Temperature distribution, Dark current, Electrical transports, Isotype heterostructures, Tunneling mechanisms, Heterojunctions, Room-temperature, Spectral range, Mu-m, Photoiodes, Barriers
Citation
Ahmetoğlu, M. (2008). "Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb". Thin Solid Films, 516(6), 1227-1231.