Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb

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dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid23093032800tr_TR
dc.date.accessioned2024-04-01T08:08:31Z
dc.date.available2024-04-01T08:08:31Z
dc.date.issued2008-01-30
dc.description.abstractCurrent flow mechanisms have been studied for liquid phase epitaxy grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the N-n isotype heterostructures were investigated in detail at several temperatures. It is shown that both the type II staggered and misaligned heterojunctions can behave as Schottky diodes and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. These measurements establish that the reverse current in both (staggered and misaligned) investigated structures are determined mainly by tunneling mechanism. The theoretical relations for reverse dark current in staggered lineup isotype heterostructures have been developed.en_US
dc.identifier.citationAhmetoğlu, M. (2008). "Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb". Thin Solid Films, 516(6), 1227-1231.en_US
dc.identifier.endpage1231tr_TR
dc.identifier.issn0040-6090
dc.identifier.issue6tr_TR
dc.identifier.pubmed
dc.identifier.scopus2-s2.0-37349095728tr_TR
dc.identifier.startpage1227tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2007.06.003en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609007008668en_US
dc.identifier.urihttps://hdl.handle.net/11452/40883en_US
dc.identifier.volume516tr_TR
dc.identifier.wos000252980400057
dc.indexed.pubmed
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.journalThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectBand alignmenten_US
dc.subjectDark currenten_US
dc.subjectIII-V quaternary compoundsen_US
dc.subjectIsotype structuresen_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectType II heterojunctionsen_US
dc.subjectGallium compoundsen_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectTemperature distributionen_US
dc.subjectDark currenten_US
dc.subjectElectrical transportsen_US
dc.subjectIsotype heterostructuresen_US
dc.subjectTunneling mechanismsen_US
dc.subjectHeterojunctionsen_US
dc.subjectRoom-temperatureen_US
dc.subjectSpectral rangeen_US
dc.subjectMu-men_US
dc.subjectPhotoiodesen_US
dc.subjectBarriersen_US
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosMaterials science, coatings & filmsen_US
dc.subject.wosPhysics, applieden_US
dc.subject.wosPhysics, condensed matteren_US
dc.titleElectrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSben_US
dc.typeArticleen_US

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