Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
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Date
2016-07
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Polish Acad Sciences Inst Physics
Abstract
Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
Description
Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur.
Keywords
Physics, Capacitance-voltage characteristics, Schottky-barrier diode, Electrical-properties, Ethylene, Nanotubes, Polymerization, Polyols, Yarn, Current mechanisms, Current-voltage measurements, Electronic device, Ethylene glycol dimethacrylate, Fabricated structures, Single-walled, Surface polymerization, Ethylene glycol
Citation
Ahmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208.