Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m
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Date
2012-05-31
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Elsevier Science
Abstract
The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
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Keywords
Materials science, Physics, Dark currents, Type II heterojunctions, Band alignment, Liquid phase epitaxy, Photovoltaic characteristics, III-V semiconductors, Spectral range, Heterojunctions, Light, Liquid phase epitaxy, Open circuit voltage, Photovoltaic effects, Band alignments, Heterojunction photodiodes, Incident light, Photovoltaic modes, Room temperature, Type II, Type II heterojunction, Current voltage characteristics
Citation
Afrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.